Mosfet 23n50e

Description 23N50E N-Channel Mosfet 500V 23A This N-channel mosfet unit maintains both low power loss and low noise. It gives controlled switching by making use of gate switching. 23N50E - 500V, N-Channel Power MOSFET - Fuji, Circuit, Pinout, Schematic, Equivalent, Replacement, Data, Sheet, Manual and Application notes. You can datasheet PDF files download. Search Partnumber: Match&Start with '23N50E' - Total: 4 ( 1/1 Page). N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET (with fast diode). UNISONIC TECHNOLOGIES CO., LTD 26N50 Preliminary Power MOSFET 26A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 26N50 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. 23N50E Datasheet(HTML) 1 Page - Fuji Electric: zoom in zoom out 1 / 5 page. FUJI POWER MOSFET. Super FAP-E 3 series. N-CHANNEL SILICON POWER MOSFET. Maintains both low power loss and low noise. Lower R DS (on) characteristic. More controllable switching dv/dt by gate resistance. Smaller V GS ringing waveform during.

This is one of the MOSFET types. This is a kind of the transistor.

Part Number : 23N50E

Function : 500V, N-CHANNEL SILICON POWER MOSFET

Package : TO-3P(Q) Type

Manufacturers : Fuji Electric Device Technology

Image :

Features

1. Maintains both low power loss and low noise
2. Lower RDS(on) characteristic
3. More controllable switching dv/dt by gate resistance
4. Smaller VGSringing waveform during switching
5. Narrow band of the gate threshold voltage (3.0±0.5V)
6. High avalanche durability

Transistor Mosfet 23n50e

Applications Autotune audacity 2020.

Terminal app for mac os. 1. Switching regulators
2. UPS (Uninterruptible Power Supply)
3. DC-DC converters

Pinout :

Other data sheets within the file : FMH23N50E

23N50E Datasheet PDF Download

N-CHANNEL SILICON POWER MOSFET

No Preview Available !

Super FAP-E3 series

N-CHANNEL SILICON POWER MOSFET

Maintains both low power loss and low noise

More controllable switching dv/dt by gate resistance

Narrow band of the gate threshold voltage (3.0±0.5V)

Outline Drawings [mm]

Applications

UPS (Uninterruptible Power Supply)

Maximum Ratings and Characteristics

Absolute Maximum Ratings at Tc=25°C (unless otherwise speciﬁed)

Drain-Source Voltage

Pulsed Drain Current

Repetitive and Non-Repetitive Maximum Avalanche Current

Repetitive Maximum Avalanche Energy

Peak Diode Recovery -di/dt

VDS

VGS

EAS

dV/dt

Maximum Power Dissipation

Operating and Storage

Tch

Characteristics

500

±92

31.5

100

315

-55 to + 150

Drain(D)

Source(S)

kV/µs

°C

VGS = -30V

Note*2

Note*4

Ta=25°C

Electrical Characteristics at Tc=25°C (unless otherwise speciﬁed)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Drain-Source On-State Resistance

Input Capacitance

Reverse Transfer Capacitance

Turn-Off Time

Gate-Source Charge

Avalanche Capability

Reverse Recovery Time

Symbol

VGS (th)

IGSS

gfs

Coss

td(on)

td(off)

Qth

QGS

IAV

trr

Conditions

ID=250µA, VDS=VGS

VDS=400V, VGS=0V

ID=11.5A, VGS=10V

VDS=25V

f=1MHz

VGS=10V

RGS=5.6Ω

ID=23A

L=1.16mH, Tch=25°C

IF=23A, VGS=0V

Tch =25°C

min.

2.5

330

150

0.5

Thermal Characteristics

Thermal resistance

Rth (ch-c)

Test Conditions

Channel to ambient

typ.

Note *2 : Stating Tch=25°C, IAS=10A, L=14.1mH, Vcc=50V, RG=50Ω

EAS limited by maximum channel temperature and avalanche current.

Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.

Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.

Note *5 : IF≤-ID, dv/dt=5.0kV/µs, Vcc≤BVDSS, Tch≤150°C.

max.

3.5

250

0.245

5250

19.5

139.5

1.35

0.40

Unit

µs

Unit

°C/W

23n50e Mosfet Equivalent

Fuji Electric

23N50E Datasheet Preview

N-CHANNEL SILICON POWER MOSFET

No Preview Available !

Allowable Power Dissipation

350

250

150

0 25 50 75 100 125

Typical Output Characteristics

50 6.0V

0 4 8 12 16 20

Typical Transconductance

100

0.1

FUJI POWER MOSFET

ID=f(VDS):Duty=0(Single pulse),Tc=25°C

10µs

100 1ms

10-2

Square waveform

100

VDS [V]

D.C.

Typical Transfer Characteristic

100

0 1 2 3 4 5 6 7 8 9 10

Typical Drain-Source on-state Resistance

0.9

0.7

0.6

0.4

10V

0.2

0.0

ID [A]

Free Datasheet http://www.datasheet-pdf.com/

Prfox594

Transistor Mosfet 23n50e

23N50E Datasheet PDF Download

Related articles across the web

N-CHANNEL SILICON POWER MOSFET

23n50e Mosfet Equivalent

N-CHANNEL SILICON POWER MOSFET

Data Sheet Mosfet 23n50e